general purpose transistors npn silicon maximum ratings symbol value unit collector-emitter voltage v ceo 20 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5v collector current-continuoun i c 500 madc thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r q ja 556 o c / w p d 300 mw 2.4 mw/ o c thermal resistance, junction to ambient r qja 417 o c / w junction and storage temperature tj ,tstg -55 to +150 o c device marking 9013qlt1=13q electrical characteristics (t a =25 o c unless otherwise noted) symbol min typ max unit off characteristics collector-emitter breakdown voltage v(br)ceo 20 - - v (ic=1.0ma) emitter-base breakdown voltage v(br)ebo 5 - - v (ie=100m a) collector-base breakdown voltage v(br)cbo 40 - - v (ic=100m a) collector cutoff current (v cb=35v) icbo - - 150 na emitter cutoff current (v eb=4v) iebo 150 na characteristic total device dissipation derate above 25 o c rating t a =25 o c derate above 25 o c alumina substrate, (2) t a=25 o c characteristic sot-23 2 emitter 3 collector 1 base feature 9013rlt1=13r 9013slt1=13s we declare that the material of product compliance with rohs requirements. 2012- willas electronic corp. device marking and ordering information device marking shipping 9013plt1 13p 3000/tape&reel 9013 q lt1 13q 3000/tape&reel 9013 r lt1 13r 3000/tape&reel 9013 slt1 13s 3000/tape&reel 9013XLT1 preliminary
on characteristics dc current gain (i c=50ma, v ce =1v) hfe 100 - 600 collector-emitter saturation voltage (i c=500ma,ib=50ma) vce(s) - - 0.6 v note: * p q r s h fe 100~200 150~300 200~400 300~600 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. general purpose transistors 9013XLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) preliminary
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